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Назва: Investigation of the porous GaP layers' chemical composition and the quality of the tests carried out
Автори: Сичікова, Яна Олександрівна
Богданов, Ігор Тимофійович
Suchikova, Yana
Bogdanov, Ihor
Vambol, S.
Vambol, V.
Kondratenko, O.
Ключові слова: GaP
Porous semiconductors,
Chemical composition
Дата публікації: 2018
Видавництво: World Academy of Materials and Manufacturing Engineering
Бібліографічний опис: Vambol S. Investigation of the porous GaP layers' chemical composition and the quality of the tests carried out / S. Vambol, V. Vambol, Y. Suchikova, I. Bogdanov, O. Kondratenko // Journal of Achievements in Materials and Manufacturing Engineering. – 2018, Vol. № 86/2. – Р. 49–60.
Короткий огляд (реферат): Purpose: The purpose of this study is to establish the quality of tests for determining the chemical composition of the porous surface obtained by the method of electrochemical etching, based on the indicators of convergence and reproducibility of the results. Design/methodology/approach: The method of electrochemical etching was used to obtain layers of porous gallium phosphide, which can be used as buffer layers for nitrides formation on their basis. Por-GaP was formed in a solution of hydrofluoric acid at a current density of j =100 mA/cm2, etching was carried out for 20 minutes. The resulting structures sulfide passivation was carried out, thus avoiding the formation of an oxide film on the samples surfaces. For this purpose, porous gallium phosphide samples were kept in a sulfide solution for 10 minutes and dried in a stream of nitrogen. The chemical composition of the porous GaP surface layers has been investigated. To do this, the method of electronprobe INCA Energy microanalysis was used. The research was carried out on the entire surface of the sample in order to calculate the total spectrum of the elemental composition of the sample under study. Findings: It was established that during anodizing, the stoichiometry of the crystals investigated did not shift significantly towards the excess of gallium atoms. Oxygen is present at an insignificant concentration of 0.3%. This indicates the effectiveness of conducting the sulfide passivation of the sample surface following the electrochemical treatment. The presence of fluorine atoms that appeared on the surface as a result of the reaction with the electrolyte during etching, is observed in extremely low concentration. Experimental studies have shown that the sample chosen can be used as a standard enterprise sample when analyzing the chemical composition of the surface of porous gallium phosphide due to its convergence, reproducibility, homogeneity. In addition, the given method for determining the standard sample can be applied to other porous semiconductors. Conducting such studies is an important technological task that will allow us to create a series of standard samples of porous semiconductors of A3B5 group. Research limitations/implications: The research was carried out for porous gallium phosphide samples synthesized in the solution of hydrofluoric acid, though, carrying out of similar experiments for por-GaP obtained in other conditions, is necessary.
URI (Уніфікований ідентифікатор ресурсу): http://dspace.bdpu.org:8080/xmlui/handle/123456789/777
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